I design inverse-designed silicon photonic devices and multi-dimensional optical interconnects for next-generation on-chip computing and AI acceleration — working across algorithm, device and system.
I am a direct-PhD candidate at Fudan University and currently a visiting PhD researcher at A*STAR Institute of Microelectronics (IME), Singapore. My research focuses on inverse-designed silicon photonic devices, multi-dimensional optical interconnects, and integrated photonic computing for AI acceleration.
My work covers the full design stack — algorithm-level inverse design, chip-scale fabrication and packaging, and system-level high-speed coherent transmission and on-chip optical computing — aimed at scaling on-chip bandwidth, dimensionality and compute density on silicon.
Photonic tensor computing scaled in parallelism by simultaneously multiplexing in time, space, frequency, mode and wavelength — unifying computation and interconnect in one architecture.
Non-volatile in-memory photonic computing on phase-change materials. Mode-insensitive PCM compute units enable hyper-multiplexed convolution; an in-situ training scheme breaks PCM write-cycle limits.
High-bandwidth silicon-photonic devices and multi-dimensional interconnect systems — process-robust inverse design, MDM/WDM components, high-speed microring modulators and on-chip high-speed link experiments.
800G silicon-photonic transceiver design and system packaging, with forward exploration for 1.6T — modulator doping optimization, high-density modulator/PD array integration, routing and multi-channel packaging.
A high-capacity on-chip interconnect jointly multiplexing wavelength, mode and higher-order modulation — 38.2 Tb/s over one silicon waveguide (5 modes × 88 wavelengths). Edge-guided inverse-designed mode (de)multiplexers are the enabling device.
An optical cloud-computing architecture deployed across an edge–metro network: inputs and AI models are modulated onto light, reaching 118.6 mW/TOPs energy efficiency and running generative-AI models in parallel.
A thin-film lithium niobate electro-optic modulator with 800 nm operational bandwidth — covering O–U telecom bands and extending into 2 µm; single-lane >240 Gbps PAM-4 (O-U) and a record 170 Gbps PAM-4 at 2 µm.
The first digital-metamaterial multi-band mode multiplexer (3 TE modes, 6 × 4.8 µm²); flat 1500–2100 nm response; 3 modes × 180 Gb/s at 1.55 µm and a record 3 × 114 Gb/s at 2 µm.
A 6G-oriented end-to-end DL framework (AMEF) for multi-user photonic-assisted fiber–mmWave systems; 66 Gbps wireless / 49.5 Gbps fiber-wireless integrated, with >1.1 dB / >0.6 dB sensitivity gain over mCAP.
Ultra-compact dual-band WDPS for dual-band PONs via two-step direct binary search; 12.77× footprint reduction; 0.36 / 0.37 dB loss and −19.91 / −17.02 dB crosstalk at 1310 / 1550 nm. Systematic hyperparameter study.