Aolong Sun孙 奥 龙

A thin-film lithium niobate (TFLN) electro-optic modulator with an unprecedented 800 nm operational bandwidth — covering the full O-to-U telecom bands and extending into the 2-µm regime. It shows >67 GHz EO bandwidth across O/S/C/L bands (~100 GHz at the centre bands) and >50 GHz at 2 µm, enabling single-lane >240 Gbps PAM-4 in the O-U range and a record 170 Gbps PAM-4 at 2 µm.

An optical cloud-computing architecture seamlessly deployed across an edge–metro network. Inputs and AI models are modulated onto light, letting edge nodes directly access an optical computing center over the edge–metro fibre. Experiments measure 118.6 mW/TOPs energy efficiency — two orders of magnitude lower than electronic cloud computing — and the same architecture runs multiple complex generative-AI models in parallel for image generation.

A high-capacity on-chip optical interconnect that jointly multiplexes wavelength, mode and higher-order modulation, demonstrating 38.2 Tb/s aggregate capacity over a single silicon waveguide (5 modes × 88 wavelengths, up to PAM-8). The enabling element is a compact, broadband, fabrication-robust mode (de)multiplexer obtained by an edge-guided inverse-design method on a digital metamaterial.